In this thesis, the theory, fabrication protocol, and initial results of an alternative nanopatterning technique called Interferometric Lithography (IL) are presented. Comprised of the identical process attributes of traditional projection photolithography, IL mirrors the wafer preparation and development procedures of our existing clean room capabilities. The main departure is solely in means of pattern delineation. IL is a "mask less" technique that employs the interference fringe pattern of two coherent beams, and can therefore be generated with a commercial laser. Due to its simplicity, Interferometric Lithography provides an attractive supplement to existing methods of nano-patterning.

Utilizing a 325 nm HeCd laser and a wavefront division interferometer, a grating with a period resolution of 600 nm was achieved. An effective protocol was evaluated for quantifying the exposure characteristics of Shipley 1805 positive photoresist. In addition, an optical diagnostic was developed to interrogate the integrity of the grating structure, providing a qualitative assessment prior to investigation under the electron microscope.