NJIT eTD::njit-etd2000-088::Tangirala, Prasant::"Current-voltage characteristics of TaSi2/Si and MOS devices using LabVIEW TM"

Analyses of current-voltage (LV) characteristics of Schottky Barrier Diodes (Tantalum Suicide) and Metal Oxide Semiconductor (MOS) Devices, using LabVIEW^TM, has been presented here. LabVIEW^TMTM, a graphical program development application, has been used to program a computer-driven Keithley Source Measure Unit (SMU) for device characterization. The SMU, which can be used as a Source Voltage - Measure Current as well as Source Current - Measure Voltage instrument, is used in the Source Voltage -Measure Current mode in this study. A General Purpose Interface Bus (GPIB) IEEE 488.2 has been used to interface the SMU with LabVIEW^TMTM. LabVIEWTM has been successfully implemented to obtain the current-voltage characteristics of semiconductor devices, such as TaSi₂ /Si and MOS structures. Based on this characterization, factors such as the barrier height for TaSi₂ /Si and current conduction mechanisms in MOS device structures have been evaluated.

Title:	Current-voltage characteristics of TaSi2/Si and MOS devices using LabVIEW^TM
Author:	Tangirala, Prasant
Document Type:	Thesis
Department:	Department of Electrical and Computer Engineering
Degree:	Master of Science
Major:	Computer Engineering
Advisory Committee:	Ravindra, N. M. Hubbi, Walid Hou, Edwin Ivanov, Dentcho V. Gokce, Oktay H.
Thesis Date:	2000, May
Keywords:	Diodes. Semiconductors.
Availability:	Unrestricted
Abstract:	Analyses of current-voltage (LV) characteristics of Schottky Barrier Diodes (Tantalum Suicide) and Metal Oxide Semiconductor (MOS) Devices, using LabVIEW^TM, has been presented here. LabVIEW^TMTM, a graphical program development application, has been used to program a computer-driven Keithley Source Measure Unit (SMU) for device characterization. The SMU, which can be used as a Source Voltage - Measure Current as well as Source Current - Measure Voltage instrument, is used in the Source Voltage -Measure Current mode in this study. A General Purpose Interface Bus (GPIB) IEEE 488.2 has been used to interface the SMU with LabVIEW^TMTM. LabVIEWTM has been successfully implemented to obtain the current-voltage characteristics of semiconductor devices, such as TaSi₂ /Si and MOS structures. Based on this characterization, factors such as the barrier height for TaSi₂ /Si and current conduction mechanisms in MOS device structures have been evaluated.
Complete Thesis:	njit-etd2000-088 (109 pages ~ 7,244 KB pdf)
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