Current-voltage characteristics of TaSi2/Si and MOS devices using LabVIEWTM
Department of Electrical and Computer Engineering
Master of Science
Ravindra, N. M.
Ivanov, Dentcho V.
Gokce, Oktay H.
Analyses of current-voltage (LV) characteristics of Schottky Barrier Diodes (Tantalum Suicide) and Metal Oxide Semiconductor (MOS) Devices, using LabVIEWTM, has been presented here. LabVIEWTMTM, a graphical program development application, has been used to program a computer-driven Keithley Source Measure Unit (SMU) for device characterization. The SMU, which can be used as a Source Voltage - Measure Current as well as Source Current - Measure Voltage instrument, is used in the Source Voltage -Measure Current mode in this study. A General Purpose Interface Bus (GPIB) IEEE 488.2 has been used to interface the SMU with LabVIEWTMTM. LabVIEWTM has been successfully implemented to obtain the current-voltage characteristics of semiconductor devices, such as TaSi2 /Si and MOS structures. Based on this characterization, factors such as the barrier height for TaSi2 /Si and current conduction mechanisms in MOS device structures have been evaluated.
njit-etd2000-088 (109 pages ~ 7,244 KB pdf)
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Created May 2, 2007