Tantalum silicide (TaSi₂) thin films were sputter deposited on p- type and n- type silicon substrates using VARIAN 3125 magnetron DC sputtering system with TaSi₂ target. The thicknesses of TaSi₂ thin films considered in this study are 200Å, 600Å and 1000Å, respectively. The TaSi₂/Si wafers were annealed at temperatures in the range of 400 to 900°T. The sheet resistances of TaSi₂ thin films with various thicknesses were measured by four-point probe before and after annealing. The sheet resistance decreases with increase in annealing temperature and decreases with the increase in thickness of TaSi₂ thin films. The structure of tantalum silicide thin-films are investigated utilizing Fourier Transform Infrared Spectroscopy (FTIR), Energy Dispersion X-ray Analysis (EDAX) and X-ray diffraction (XRD). Due to the absorption of photons in the Si substrate, we cannot get reliable results from FTIR. EDAX results show the composition characteristics of TaSi₂ thin films. X-ray diffraction results show changes in the structure of TaSi₂ thin film from amorphous to crystalline after annealing. Oxidation characteristics of the TaSi₂ films have been investigated in the temperature range of 500°C-900°C in wet steam ambients. The oxidation time ranged from 0.5 to 1.5 hours. No oxide formation of tantalum was observed in the experiment because the surface layer of the mixed Ta-Si oxides prevented the further oxidation of tantalum silicide.