| Title: | Emissivity measurements and modeling of silicon related materials |
| Author: | |
| Document Type: | Thesis |
| Department: | Department of Electrical and Computer Engineering |
| Degree: | Master of Science |
| Major: | Electrical Engineering |
| Advisory Committee: |
Ravindra, N. M.
Sohn, Andrew
Hou, Edwin
|
| Thesis Date: | 1999, August |
| Keywords: |
Silicon.
Semiconductors --Heat treatment.
Rapid thermal processing.
|
| Availability: | Unrestricted |
| Abstract: |
The objective of the thesis was to study the radiative properties of silicon related materials for applications in rapid thermal proceesing. In particular, three distinct materials have been considered - Silicon, SIMOX and Tantalum. The research highlights are Establishment of spectral emissometry as a novel, reliable and reproducible technique for a) Determination of wavelength and temperature dependent reflectivity, transmissivity, emissivity of silicon related materials and structures. The emissometer operates in the wavelength range of 1-20µm and temperature range of 300-1200K. b) Establishment of methodoligies to obtain the frnndemental constants. Effects of wavelength, temperature, total available free carriers by doping types have been considered. Comparisons have been sought with the available knowledge of “α” in the litreture by the extensive use of the Multi-Rad model. This is a state of the art model that has been developed by MIT/SEMATECH. |
| Complete Thesis: | njit-etd1999-070 (70 pages ~ 3,719 KB pdf) |
| Feedback: | Please complete this Feedback Form to inform us about your experience using this website. It will assist us in better serving your information needs in the future. Thank You! |
|
Created March 13, 2008
To view these documents you will need the Acrobat Reader Plug-in. If you do not have it you can download it free from
|