Emissivity measurements and modeling of silicon related materials
Department of Electrical and Computer Engineering
Master of Science
Ravindra, N. M.
Semiconductors --Heat treatment.
Rapid thermal processing.
The objective of the thesis was to study the radiative properties of silicon related materials for applications in rapid thermal proceesing. In particular, three distinct materials have been considered - Silicon, SIMOX and Tantalum.
The research highlights are Establishment of spectral emissometry as a novel, reliable and reproducible technique for a) Determination of wavelength and temperature dependent reflectivity, transmissivity, emissivity of silicon related materials and structures. The emissometer operates in the wavelength range of 1-20µm and temperature range of 300-1200K. b) Establishment of methodoligies to obtain the frnndemental constants. Effects of wavelength, temperature, total available free carriers by doping types have been considered. Comparisons have been sought with the available knowledge of “α” in the litreture by the extensive use of the Multi-Rad model. This is a state of the art model that has been developed by MIT/SEMATECH.
njit-etd1999-070 (70 pages ~ 3,719 KB pdf)
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Created March 13, 2008