This study is focussed on the synthesis and characterization of diamondlike carbon (DLQ films deposited on silicon wafers and glass by plasma enhanced chemical vapor deposition (PECVD), using acetylene (C₂H₄) as a precursor. The process parameters, such as temperature, pressure, power and reactant gas flow rate have been systematically varied and their effects on the film growth rate and properties were investigated. The optimized deposition condition appeared to be at 150°C, 200mTorr, 200 Watts and flow rate = 25 sccm. For these conditions, the films were hard and found to have good adhesion to the substrate, and resistant to BF etching (49% BY diluted to 10% with distilled water). It was found that the adhesion of the DLC film to the substrate is good if the substrate is first etched with oxygen and CF₄ prior to the deposition.