The present trend is to be able to develop cheaper and more convenient methods to design and fabricate non volatile RAM that will lead to an alteration of the computer architecture itself This will help replace the DRAM, which the computers currently have in their memory. The proposed NVRAM is designed to overcome the common difficulties faced with the use of ferroelectric materials used in the fabrication of NVRAM. The new idea essentially consists of fabricating the circuitry component separately and the substrate component separately and binding the two with the help of a conducting material. Electrical properties such as contact resistance and elasticity of the conducting material are very important. The design, simulation and fabrication of the circuitry part were carried out which would help test the conducting material. The conducting materials could be conducting polymer or indium bump pads. In this work the indium bump pads were deposited on the circuitry component and patterned. A glass plate with a conducting tin oxide film was then flipped over the entire device to evaluate the effectiveness of the 128 X 128 indium bump pads. The results obtained were very promising for actual fabrication of NVRAM using this technique.