Radiative properties of silicon
Department of Electrical and Computer Engineering
Master of Science
Ravindra, N. M.
Gokce, Oktay H.
Drinking Water Purification
The objective of this thesis was 1) to study the radiative properties of silicon in the wavelength range of 1 to 20 microns and temperature range of 30 to 1000°C for the development of a multi-wavelength pyrometer 2) to develop a [sic] methodologies for deconvolution of the measured optical properties to yield fundamental optical constants of bulk materials. A novel spectral emissometer has been utilized for measurement of the temperature dependent radiative properties of silicon. The temperature determination capability of the emissometer was tested and verified using a standard thermocouple embedded in a silicon wafer. The temperature measurement accuracy, with the emissometer, was found to be within ± 10°C of the thermocouple temperature for a temperature range of 30 to 300°C. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel non-contact, real-time approach using the spectral emissometer. The optical properties of n and p-type lightly and heavily doped silicon wafers were investigated. These studies have led us to establish spectral emissometer as a reliable technique for simultaneous measurements of radiative properties and temperature in the 1-20 µm wavelength range.
njit-etd1998-016 (90 pages ~ 4,775 KB pdf)
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Created December 12, 2001