The low temperature static characteristics of silicon junction field-effect transistors (JFETs) have been investigated and analysed. The following changes were observed after cooling down the transistors: pinch-off voltage and transconductance increases; and drain current is changed as a function of the drain-source voltage. It was found that there was an increase in the amplifying properties and a reduction in noise voltage of cooled transistors. In addition, the temperature and voltage dependence of leakage current have been studied. Temperatures below 77K are of interest in evaluating effects of impurity freezeout and temperature above 77K are important since actual device temperature will be about the ambient. Operation of FET circuits at liquid nitrogen temperature has been suggested as a means of improving circuit and system performance.