An investigation of electrical and optical properties of sputtered amorphous silicon nitride and germanium thin films
Department of Electrical Engineering
Master of Science
Cornely, Roy H.
Ball, W. H. Warren
Thin films --Electric properties.
Thin films --Optical properties.
Low temperature preparation of thin amorphous Silicon Nitride and
Germanium Films by direct RF sputter deposition was investigated. Influence
of various sputtering parameters on film properties was studied. Infrared
transmission spectrophotometry was used to evaluate optical properties
of the films whereas electrical characteristics of the films were determined
from current-voltage measurements of MIS structures. For Silicon Nitride
films it was observed that the stoichiometry, as indicated by the IR transmission,
dielectric constant and current density versus square root of electric
field measurements, was a strong function of the sputtering gas composition
and particularly the Ar/N ratio in the sputtering gas. It was established
from the current-voltage relationship that the dominant conduction mechanism
in these films is of PooleFrenkel type. The current-voltage characteristics
Germanium Gamma-ray p-n junction detectors coated with 30 nm thick sputtered amorphous germanium exhibited improved surface stability. Hydrogenated amorphous germanium was also used and the result indicated that this material would have superior passivating properties than amorphous Germanium.
njit-etd1987-007 (137 pages ~ 5,299 KB pdf)
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Created October 24, 2006