An investigation of semiconductor surface-related phenomena has been undertaken to correlate 1/F noise with drain breakdown in P-channel enhancement MOSFET's. Increases in the intensity of drain current fluctuations at 10Hz and at 1KHz, particularly at the higher frequency, was observed following accelerated life-testing for threshold voltage drift. It was also concluded that mobile ions near the oxide-semiconductor interface produce a sharp increase in fast trapping centers. It was also found that 1/F noise intensity consistently peaked at the threshold of drain breakdown and that it steadily decreased with further increases in drain current. Of all the transistors tested, those with relatively low noise intensity were found to exhibit sharper breakdown characteristics and higher breakdown voltages while those transistors with high noise showed soft breakdown characteristics. It was therefore concluded that the low noise MOS transistors are superior to those with relatively high noise and that the 1/F noise-drain current characteristics may be used in nondestructive testing to determine the approximate drain breakdown voltage.