| Title: |
Correlation of 1/f noise with threshold drift in MOSFET's
|
| Author: | |
| Document Type: |
Thesis
|
| Department: |
Department of Electrical Engineering
|
| Degree: |
Master of Science
|
| Major: |
Electrical Engineering
|
| Advisory Committee: |
Misra, Raj Pratap
[illegible signature]
Meola, Robert R.
|
| Thesis Date: |
1969, June
|
| Keywords: |
Field-effect Transistors
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| Availability: |
Unrestricted
|
| Abstract: |
A brief review of the fundamentals of MOSFET's is given. A correlation between threshold drift and surface states is made, with a following correlation between surface states and 1/f noise. It therefore follows that MOSFET's with a high 1/f noise level will drift more than those with a low level of 1/f noise. Experiments were carried out to show this effect, but no clear cut conclusions can be drawn from the experimental work. |
| Complete Thesis: |
njit-etd1969-001
(73 pages ~ 7,569 KB pdf)
|
| Download by Chapters: |
Front
Matter (Title Page, Abstract, Table
of Contents, etc. ~ 9 pages ~ 1,178 KB pdf)
Section
One: MOSFET Fundamentals (18 pages
~ 2,493 KB pdf)
Section
Two: Drift and Failure Mechanisms (15
pages ~ 1,675 KB pdf)
Section
Three: Noise (11 pages ~ 917 KB pdf)
Section
Four: Experimental Procedure (15 pages
~ 782 KB pdf)
Section
Five: Conclusions (3 pages ~ 181 KB
pdf)
Section
Six: Recommendations (2 pages ~ 77
KB pdf)
References
(7 pages ~ 523 KB pdf)
|
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