NJIT eTD: The New Jersey Institute of Technology's electronic Theses & Dissertations
Title:
Correlation of 1/f noise with threshold drift in MOSFET's
Author:
Rooney, John Peter
Document Type:
Thesis
Department:
Department of Electrical Engineering
Degree:
Master of Science
Major:
Electrical Engineering
Advisory Committee:
Misra, Raj Pratap
[illegible signature]
Meola, Robert R.
Thesis Date:
1969, June
Keywords:
Field-effect Transistors
Availability:
Unrestricted
Abstract:

A brief review of the fundamentals of MOSFET's is given. A correlation between threshold drift and surface states is made, with a following correlation between surface states and 1/f noise. It therefore follows that MOSFET's with a high 1/f noise level will drift more than those with a low level of 1/f noise. Experiments were carried out to show this effect, but no clear cut conclusions can be drawn from the experimental work.

Complete Thesis:
njit-etd1969-001 (73 pages ~ 7,569 KB pdf)
Download by Chapters:
Front Matter (Title Page, Abstract, Table of Contents, etc. ~ 9 pages ~ 1,178 KB pdf)
Section One: MOSFET Fundamentals (18 pages ~ 2,493 KB pdf)
Section Three: Noise (11 pages ~ 917 KB pdf)
Section Four: Experimental Procedure (15 pages ~ 782 KB pdf)
Section Five: Conclusions (3 pages ~ 181 KB pdf)
Section Six: Recommendations (2 pages ~ 77 KB pdf)
References (7 pages ~ 523 KB pdf)
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Created November 8, 2001
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